This marks a pivotal shift in data center design, enabling megawatt-scale AI factories that are more efficient, scalable, and sustainable. The company’s silicon MOSFETs are already widely adopted across automotive and industrial sectors, providing a cost-effective and reliable solution for today’s power conversion needs. Complementing SiC, ROHM is advancing gallium nitride technologies under the EcoGaN™ brand. These innovations support the growing demand for smaller, more efficient power systems in AI data centers. Engineered for high-efficiency, high-density power conversion, they are particularly well-suited for the centralized power systems envisioned in NVIDIA’s architecture.